Search results for "Charge pump"
showing 10 items of 14 documents
Reconfigurable dualband antenna module with integrated high voltage charge pump and digital analog converter
2014
Integration of a reconfigurable antenna module for handheld applications employing a set of novel technologies is demonstrated. A low profile dualband hybrid dielectric resonator antenna (DRA) based on glass-ceramics and a tunable matching network (TMN) based on ferroelectric varactors with a maximum biasing of 90V form a reconfigurable antenna module. The control of the antenna module is performed by a 120V CMOS high voltage (HV) charge pump with an 8-bit digital analog (D/A) converter generated from a 3.7V battery. Adaptive impedance matching at the lower band of 1.9 GHz is carried out by the TMN when the dualband antenna is exposed to different operation scenarios. Meanwhile, the upper b…
Enhancing single-parameter quantum charge pumping in carbon-based devices
2011
We present a theoretical study of quantum charge pumping with a single ac gate applied to graphene nanoribbons and carbon nanotubes operating with low resistance contacts. By combining Floquet theory with Green's function formalism, we show that the pumped current can be tuned and enhanced by up to two orders of magnitude by an appropriate choice of device length, gate voltage intensity and driving frequency and amplitude. These results offer a promising alternative for enhancing the pumped currents in these carbon-based devices.
Stability improvement of isolated multiple-output DC/DC converter using coupled inductors
2016
Coupling output inductors is a very popular solution when designing a multiple-output DC/DC system. Space-borne circuits are one of the areas where a custom DC/DC converter design with coupled inductors could be preferred to have a detailed design of all variables. Output voltage regulation can be improved using coupled output inductors on a multiple-output DC/DC converter, and, as demonstrated in this paper, it provides an enhanced stability. This paper presents the small signal analysis of a push-pull converter with seven outputs having all its output inductors coupled together and compares it theoretically to the uncoupled version to demonstrate the stability improvement. The theoretical…
Linear-non-linear digital control for dc/dc converters with fast transient response
2009
A linear-non-linear digital control for multi-module DC/DC converters that improves system stability, solves the limit-cycle problem, reduces recovery time and limits over- and under-shoots in regulated output voltage, is presented. A simulation model in Matlab-Simulink/Active-HDL mixed environment is described. Preliminary hardware tests on a single-phase step-down converter are reported. Simulation and experimental results are shown.
DC/DC converter topologies for electrolyzers: State-of-the-art and remaining key issues.
2017
In recent years, the use of electrolyzers to produce cleanly and efficiently hydrogen from renewable energy sources (i.e. wind turbines, photovoltaic) has taken advantage of a growing interest from researchers and industrial. Similarly to fuel cells, DC/DC converters are needed to interface the DC bus with the electrolyzer. Usually, electrolyzers require a low DC voltage to produce hydrogen from water. For this reason, a DC/DC buck converter is generally used for this purpose. However, other DC/DC converter topologies can be used depending on the feature of the electrolyzer and electrical grid as well. The main purpose of this paper is to present the current state-of-the-art of DC/DC conver…
Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs
2006
The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories
2009
Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
2006
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly g…
Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress.
2014
Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of $q_e f$ as function of control parameters, where $q_e$ is the electron charge and $f$ is the frequency of modulation. In recent years, robust and accurate quantized charge pumps have been developed based on semiconductor quantum dots with tunable tunnel barriers. These de…
Single-parameter quantized charge pumping in high magnetic fields
2008
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.